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IPA60R360P7SXKSA1 600V CoolMOS 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS and

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IPA60R360P7SXKSA1 600V CoolMOS 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS and

Brand Name : Infineon

Model Number : IPA60R360P7SXKSA1

Certification : CE,ROHS

Place of Origin : China

MOQ : 1pcs

Frequency Stability : ±50ppm

Frequency Tolerance : ±30ppm

Operating Temperature : -40°C ~ 85°C

Load Capacitance : 18pF

Package / Case : HC-49/US

Name : Passive Electronic Components

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IPA60R360P7SXKSA1 600V CoolMOSandtrade; 360mandOmega; RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS andamp; Industrial Apps

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Features

andbull;Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness

andbull;Significantreductionofswitchingandconductionlosses

andbull;ExcellentESDrobustnessandgt;2kV(HBM)forallproducts

andbull;BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mmandsup2;)

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Benefits

andbull;Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages

andbull;Simplifiedthermalmanagementduetolowswitchingandconduction losses

andbull;Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualityduetoandgt;2kVESD protection andbull;Suitableforawidevarietyofapplicationsandpowerranges

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Potentialapplications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g. PCSilverbox,Adapter,LCDandamp;PDPTV,Lighting,Server,Telecom andUPS.

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Productvalidation

QualifiedaccordingtoJEDECStandard

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MOSFET

600V CoolMOSandordf; P7 Power Device

TheCoolMOSandtrade;7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOSandtrade;P7seriesisthesuccessortotheCoolMOSandtrade;P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.

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INFORMATION

Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25anddeg;C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 140andmicro;A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
andplusmn;20V
Input Capacitance (Ciss) (Max) @ Vds
555 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
22W (Tc)
Operating Temperature
-40anddeg;C ~ 150anddeg;C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
Base Product Number

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Drawing

IPA60R360P7SXKSA1 600V CoolMOS 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS and

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2. Produce Communication Antenna, RF Coaxial Cable, RF Connector,Terminals.

3. Distribute GSM/GPRS,GPS,3G,4G/LTE Module.

Our high quality products , competitive price and professional service,

be sure to meet your need for all kinds of components. ^_^

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Product Tags:

IPA60R360P7SXKSA1

      

IPA60R360P7SXKSA1 MOSFET

      
Quality IPA60R360P7SXKSA1 600V CoolMOS 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS and for sale

IPA60R360P7SXKSA1 600V CoolMOS 360mΩ RDS(on) 11A Current Ultra-Low Switching Losses High Efficiency Robust ESD Protection TO-220 Package for SMPS and Images

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