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Brand Name : Vishay
Model Number : SI2333DDS-T1-GE3
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Packaging Type : Reel Tray Tube Tape Bag
Operating Temperature : -40°C ~ 125°C
Package / Case : WSON-8
Mounting Type : SMD/SMT
Manufacturing Date Code : 2024+
Function : Step-Down
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization: For definitions of compliance please see
APPLICATIONS
• Smart Phones and Tablet PCs
- Load Switch
- Battery Switch
Overview
  The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET in an ultra-compact sC-70-3package, optimized for space-constrained, high-efficiency power management applications.With its 1.8V logic-level drive and 0.0459 ultra-low Rds(on), it delivers superior performance inportable electronics, automotive systems, and loT devices.
Information
| Category |  | |
| Mfr |  | |
| Series |  | |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |  | 
| Part Status | Active |  | 
| FET Type |  | |
| Technology |  | |
| Drain to Source Voltage (Vdss) | 12 V |  | 
| Current - Continuous Drain (Id) @ 25°C |  | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |  | 
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 4.5V |  | 
| Vgs(th) (Max) @ Id | 1V @ 250µA |  | 
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 8 V |  | 
| Vgs (Max) | ±8V |  | 
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 6 V |  | 
| FET Feature | - |  | 
| Power Dissipation (Max) | 1.2W (Ta), 1.7W (Tc) |  | 
| Operating Temperature | -55°C ~ 150°C (TJ) |  | 
| Grade | - |  | 
| Qualification | - |  | 
| Mounting Type | Surface Mount |  | 
| Supplier Device Package | SOT-23-3 (TO-236) |  | 
| Package / Case |  | |
| Base Product Number | 
Drawing

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